Measurement of trapping time constants in proton-irradiated silicon pad detectors

被引：32

作者：

Krasel, O ^{[1
]}

Gössling, C ^{[1
]}

Klingenberg, R ^{[1
]}

Rajek, S ^{[1
]}

Wunstorf, R ^{[1
]}

机构：

[1] Univ Dortmund, Lehrstuhl Expt Phys 4, D-44227 Dortmund, Germany

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 06期

关键词：

D O I：

10.1109/TNS.2004.839096

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Silicon pad-detectors fabricated from oxygenated silicon were irradiated with 24-GeV/c protons with fluences between 2(.)10(13) n(eq)/cm(2) and 9(.)10(14) n(eq)/cm(2). The transient current technique was used to measure the trapping probability for holes and electrons. The measured trapping probabilities scale linearly with the fluence. Annealing, accelerated at 60degreesC, leads to an increased trapping for holes while electron trapping decreases.

引用

页码：3055 / 3062

页数：8

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