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THE EVOLUTION OF THE MINIMOS MOBILITY MODEL

被引：64
作者：
SELBERHERR, S
HANSCH, W
SEAVEY, M
SLOTBOOM, J
机构：
[1] SIEMENS AG,RES LABS,W-8000 MUNICH 83,GERMANY
[2] DIGITAL EQUIPMENT CORP,HUDSON,MA 01749
[3] PHILIPS RES LABS,5600 JA EINDHOVEN,NETHERLANDS
来源：
SOLID-STATE ELECTRONICS | 1990年 / 33卷 / 11期
关键词：
D O I：
10.1016/0038-1101(90)90117-W
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 [电气工程]; 0809 [电子科学与技术];
摘要：
The paper reviews the evolution of the mobility model of the MINIMOS program for the two-dimensional simulation of miniaturized MOS devices over a period of 10 years. © 1990.
引用
收藏
页码：1425 / 1436
页数：12
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