Site stability, diffusion, and charge dynamics for muonium in GaAs

被引：8

作者：

Estle, TL ^{[1
]}

Chow, KH

Cox, SFJ

Davis, EA

Hitti, B

Kiefl, RF

Lichti, RL

Schwab, C

机构：

[1] Rice Univ, Dept Phys, Houston, TX 77251 USA

[2] Lehigh Univ, Sherman Fairchild Labs, Bethlehem, PA 18015 USA

[3] Rutherford Appleton Lab, ISIS, Chilton OX11 0QX, England

[4] Univ Leicester, Dept Phys, Leicester LE1 7RH, Leics, England

[5] TRIUMF, Vancouver, BC V6T 2A3, Canada

[6] Univ British Columbia, Vancouver, BC V6T 1Z1, Canada

[7] Texas Tech Univ, Dept Phys, Lubbock, TX 79409 USA

[8] CNRS, PHASE, F-67037 Strasbourg, France

来源：

DEFECTS IN SEMICONDUCTORS - ICDS-19, PTS 1-3 | 1997年 / 258-2卷

关键词：

muonium; hydrogen; dynamics; diffusion; GaAs;

D O I：

10.4028/www.scientific.net/MSF.258-263.849

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The motion and charge dynamics of muonium states in GaAs have been investigated. In heavily-doped n-type GaAs, Mu(-) is stable to high temperatures. It resides in a T-Ga interstice where it is immobile to 500K. At high e(-) concentrations Mu(T) acts as a recombination center and a rapid -/0 charge cycle occurs above 750K. In semi-insulating and lightly-doped n-type GaAs a different set of charge-state transitions yield 0/+ cycles above 550K. These samples show some evidence of a BC to T site change for Mu(0) near 200K. Due to its high mobility, the charge cycles allow Mu(T)(0) to dominate diffusion even when it is not the equilibrium state. Mu(+) occupies two locations in p-type GaAs. The low-temperature state, presumably Mu(BC)(+), becomes mobile near 200K and traps at a second site above 400K.

引用

页码：849 / 854

页数：6

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