Growth of a-b-axis orientation ZnO films with zinc vacancies by SSCVD

被引：12

作者：

Dai, L. P. ^{[1
]}

Deng, H. ^{[1
]}

Chen, G. ^{[1
]}

Tang, C. F. ^{[1
]}

Wei, M. ^{[1
]}

Li, Y. ^{[1
]}

机构：

[1] Univ Elect Sci & Technol China, State Key Lab Elect Thin Films & Integrated Devic, Sch Microelect & Solid State Elect, Chengdu 610054, Peoples R China

来源：

VACUUM | 2007年 / 81卷 / 08期

关键词：

ZnO thin films; a-b-axis orientation; SSCVD; zinc vacancies; PL;

D O I：

10.1016/j.vacuum.2006.11.005

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

Zinc oxide (ZnO) films were grown on silicon (1 0 0) substrates by single-source chemical vapor deposition (SSCVD). X-ray diffraction (XRD) showed that ZnO thin films have a polycrystalline hexagonal wurtzite structure with (1 0 0) and (1 0 1) orientation, i.e., a-b-axis orientation. Atomic force microscopy (AFM) and scanning electronic microscopy (SEM) showed the films to be of relatively high density with a smooth surface. X-ray photoelectron spectroscopy (XPS) showed that the deposited films were very close to stoichiometry but contained a small number of zinc instead of O vacancies as normally found with ZnO films produced by other methods. These results were also confirmed by photoluminescence (PL) measurements. (c) 2007 Elsevier Ltd. All rights reserved.

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页码：969 / 973

页数：5

相关论文

共 20 条

[1]

Optically pumped lasing of ZnO at room temperature [J].

Bagnall, DM ;

Chen, YF ;

Zhu, Z ;

Yao, T ;

Koyama, S ;

Shen, MY ;

Goto, T .

APPLIED PHYSICS LETTERS, 1997, 70 (17) :2230-2232

[2]

Photoluminescence studies in ZnO samples [J].

Boemare, C ;

Monteiro, T ;

Soares, MJ ;

Guilherme, JG ;

Alves, E .

PHYSICA B-CONDENSED MATTER, 2001, 308 :985-988

[3]

Second harmonic generation in laser ablated zinc oxide thin films [J].

Cao, H ;

Wu, JY ;

Ong, HC ;

Dai, JY ;

Chang, RPH .

APPLIED PHYSICS LETTERS, 1998, 73 (05) :572-574

[4]

Cullity B.D., 1978, ELEMENTS XRAY DIFFRA, V2nd, P102

[5]

Microstructure control of ZnO thin films prepared by single source chemical vapor deposition [J].

Deng, H ;

Russell, JJ ;

Lamb, RN ;

Jiang, B ;

Li, Y ;

Zhou, XY .

THIN SOLID FILMS, 2004, 458 (1-2) :43-46

[6]

Characterization of the ZnO thin film prepared by single source chemical vapor deposition under low vacuum condition [J].

Deng, H ;

Gong, B ;

Petrella, AJ ;

Russell, JJ ;

Lamb, RN .

SCIENCE IN CHINA SERIES E-TECHNOLOGICAL SCIENCES, 2003, 46 (04) :355-360

[7]

Structural, optical, and surface acoustic wave properties of epitaxial ZnO films grown on (01(1)over-bar2) sapphire by metalorganic chemical vapor deposition [J].

Gorla, CR ;

Emanetoglu, NW ;

Liang, S ;

Mayo, WE ;

Lu, Y ;

Wraback, M ;

Shen, H .

JOURNAL OF APPLIED PHYSICS, 1999, 85 (05) :2595-2602

[8]

HICKERNELL FS, 1973, J APPL PHYS, V44, P1061, DOI 10.1063/1.1662307

[9]

Hydrogen: A relevant shallow donor in zinc oxide [J].

Hofmann, DM ;

Hofstaetter, A ;

Leiter, F ;

Zhou, HJ ;

Henecker, F ;

Meyer, BK ;

Orlinskii, SB ;

Schmidt, J ;

Baranov, PG .

PHYSICAL REVIEW LETTERS, 2002, 88 (04) :4

[10]

High-filling-fraction inverted ZnS opals fabricated by atomic layer deposition [J].

King, JS ;

Neff, CW ;

Summers, CJ ;

Park, W ;

Blomquist, S ;

Forsythe, E ;

Morton, D .

APPLIED PHYSICS LETTERS, 2003, 83 (13) :2566-2568