Thermal annealing effects on morphology and electrical response in ultrathin film organic transistors

被引:31
作者
Dinelli, F
Murgia, M
Biscarini, F
De Leeuw, DM
机构
[1] CNR A, ISMN, Sez Bologna, I-40129 Bologna, Italy
[2] Philips Res Labs, NL-5656 AA Eindhoven, Netherlands
关键词
organic field effect transistors; organic molecular beam deposition; hexamethyldisilazane;
D O I
10.1016/j.synthmet.2004.08.016
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Ultra-thin organic film transistors were annealed in vacuum at constant temperature and for different time intervals. This treatment eliminates unintentional doping and reduces hysteresis in I/V curves, both for pentacene and alpha-sexithienyl, without substantially improving the charge mobility. Devices that originally exhibited high and non-ohmic contact resistance never matched the characteristics of devices with well grown electrode/semiconductor interfaces, even after annealing. Prolonging the annealing time resulted in film rupture due to either re-crystallization or molecular desorption. This process started before healing of molecular disorder at the relevant interfaces could take place. (C) 2004 Elsevier B.V. All rights reserved.
引用
收藏
页码:373 / 376
页数:4
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