Response time analysis of SiGe/Si modulation-doped multiple-quantum-well structures for optical modulation

被引：32

作者：

Marris, D ^{[1
]}

Cassan, E ^{[1
]}

Vivien, L ^{[1
]}

机构：

[1] Univ Paris 11, CNRS, Inst Elect Fondamentale, Unite Mixte Rech, F-91405 Orsay, France

来源：

JOURNAL OF APPLIED PHYSICS | 2004年 / 96卷 / 11期

关键词：

D O I：

10.1063/1.1806995

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The response time of SiGe/Si modulation-doped multiple-quantum-well modulators is investigated. A refractive index variation is achieved by the depletion of the free carriers initially present in the wells. Both the tunneling and thermionic emissions are taken into account to study the time needed for the free carriers to escape from and to be captured into the wells. Results are presented for an optimized three-Si0.8Ge0.2-quantum-well (QW) (10-nm-thick) device. Such a QW structure can intrinsically reach an operation frequency around 13 GHz. (C) 2004 American Institute of Physics.

引用

页码：6109 / 6112

页数：4

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