Vacancies and voids in hydrogenated amorphous silicon

被引：245

作者：

Smets, AHM ^{[1
]}

Kessels, WMM ^{[1
]}

van de Sanden, MCM ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Ctr Plasma Phys & Radiat Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 10期

关键词：

D O I：

10.1063/1.1559657

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The hydride configurations in the hydrogenated amorphous silicon (a-Si:H) network have been studied by means of infrared absorption spectroscopy. The results on the film mass density of a-Si:H deposited by means of an expanding thermal plasma reveal the presence of two distinct regions in terms of hydrogen content and microstructure: below approximately 14 at. % H a-Si:H contains predominantly divacancies decorated by hydrogen, above 14 at. % H a-Si:H contains microscopic voids. These two distinct regions provide additional information on the origin of the low and high hydride stretching modes at 1980-2010 and 2070-2100 cm(-1), respectively. (C) 2003 American Institute of Physics.

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页码：1547 / 1549

页数：3

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