Flexible Low-Voltage Organic Transistors and Circuits Based on a High-Mobility Organic Semiconductor with Good Air Stability

被引:221
作者
Zschieschang, Ute [1 ]
Ante, Frederik [1 ]
Yamamoto, Tatsuya [2 ]
Takimiya, Kazuo [2 ]
Kuwabara, Hirokazu [3 ]
Ikeda, Masaaki [3 ]
Sekitani, Tsuyoshi [4 ]
Someya, Takao [4 ]
Kern, Klaus [1 ,5 ]
Klauk, Hagen [1 ]
机构
[1] Max Planck Inst Solid State Res, D-70569 Stuttgart, Germany
[2] Hiroshima Univ, Grad Sch Engn, Inst Adv Mat Res, Dept Appl Chem, Higashihiroshima 724, Japan
[3] Nippon Kayaku Co Ltd, Funct Chem R&D Labs, Kita Ku, Tokyo 115, Japan
[4] Univ Tokyo, Dept Elect Engn, Tokyo 113, Japan
[5] Ecole Polytech Fed Lausanne, Inst Phys Mat Condensee, CH-1015 Lausanne, Switzerland
关键词
THIN-FILM TRANSISTORS; FIELD-EFFECT TRANSISTORS; HIGH-PERFORMANCE; PHENYLENE OLIGOMERS; CRYSTAL-STRUCTURE; PENTACENE; DERIVATIVES; SUBSTRATE; OXIDATION;
D O I
10.1002/adma.200902740
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
Flexible transistors and circuits based on dinaphtho-[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT), a conjugated semiconductor with a large ionization potential (5.4 eV), are reported. The transistors have a mobility of 0.6 cm(2) V(-1) s(-1) and the ring oscillators have a stage delay of 18 mu s. Due to the excellent stability of the semiconductor, the devices and circuits maintain 50% of their initial performance for a period of 8 months in ambient air.
引用
收藏
页码:982 / +
页数:5
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