p-channel organic semiconductors based on hybrid acene-thiophene molecules for thin-film transistor applications

被引:200
作者
Merlo, JA
Newman, CR
Gerlach, CP
Kelley, TW
Muyres, DV
Fritz, SE
Toney, MF
Frisbie, CD
机构
[1] Univ Minnesota, Dept Chem Engn & Mat Sci, Minneapolis, MN 55455 USA
[2] 3M Co, Corp Res Mat Lab, St Paul, MN 55144 USA
[3] Stanford Linear Accelerator Ctr, Stanford Synchrotron Radiat Lab, Menlo Pk, CA 94025 USA
关键词
D O I
10.1021/ja044078h
中图分类号
O6 [化学];
学科分类号
0703 ;
摘要
We report the structural and electrical characterization of two new p-channel organic semiconductors, 5,5'-bis(2-tetracenyl)-2,2'-bithiophene (1) and 5,5'-bis(2-anthracenyl)-2,2'-bithiophene (2). Both compounds exhibited a high degree of thermal stability with decomposition temperatures of 530 degrees C and 425 degrees C for 1 and 2, respectively. The thin-film structures of 1 and 2 were examined using wide-angle X-ray diffraction (XRD), grazing incidence X-ray diffraction (GIXD), and atomic force microscopy (AFM). Films of 1 and 2 pack in similar triclinic unit cells with the long axes of the molecules nearly perpendicular to the substrate. Thin-film transistors (TFTs) based on 1 and 2 exhibit contact-corrected linear regime hole mobility as high as 0.5 cm(2)/Vs and 0.1 cm(2)/Vs, respectively. The specific contact resistance at high gate voltages for gold top contacts was 2 x 10(4) Omega cm and 3 x 10(4) Omega cm for 35 nm thick films of 1 and 2, respectively. Long-term air stability tests revealed less degradation of the electrical properties of 1 and 2 in comparison to pentacene. Variable temperature measurements revealed activation energies as low as 22 and 27 meV for 1 and 2, respectively. The temperature and gate voltage dependence of the mobility are discussed in terms of a double exponential distribution of trap states and a model accounting for the layered structure of the organic films. The enhanced air and thermal stability over pentacene, combined with good electrical performance characteristics, make 2 a promising candidate for future organic TFT applications.
引用
收藏
页码:3997 / 4009
页数:13
相关论文
共 70 条
[1]   Mobility studies of field-effect transistor structures based on anthracene single crystals [J].
Aleshin, AN ;
Lee, JY ;
Chu, SW ;
Kim, JS ;
Park, YW .
APPLIED PHYSICS LETTERS, 2004, 84 (26) :5383-5385
[2]   Charge carrier mobility in doped semiconducting polymers [J].
Arkhipov, VI ;
Heremans, P ;
Emelianova, EV ;
Adriaenssens, GJ ;
Bässler, H .
APPLIED PHYSICS LETTERS, 2003, 82 (19) :3245-3247
[3]   The applicability of the transport-energy concept to various disordered materials [J].
Baranovskii, SD ;
Faber, T ;
Hensel, F ;
Thomas, P .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1997, 9 (13) :2699-2706
[4]   CHARGE TRANSPORT IN DISORDERED ORGANIC PHOTOCONDUCTORS - A MONTE-CARLO SIMULATION STUDY [J].
BASSLER, H .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1993, 175 (01) :15-56
[5]   Surface glass transition temperature of amorphous polymers. A new insight with SFM [J].
Bliznyuk, VN ;
Assender, HE ;
Briggs, GAD .
MACROMOLECULES, 2002, 35 (17) :6613-6622
[6]   Gated-four-probe a-Si:H TFT structure: A new technique to measure the intrinsic performance of a-Si:H TFT [J].
Chen, CY ;
Kanicki, J .
IEEE ELECTRON DEVICE LETTERS, 1997, 18 (07) :340-342
[7]   Variable temperature film and contact resistance measurements on operating n-channel organic thin film transistors [J].
Chesterfield, RJ ;
McKeen, JC ;
Newman, CR ;
Frisbie, CD ;
Ewbank, PC ;
Mann, KR ;
Miller, LL .
JOURNAL OF APPLIED PHYSICS, 2004, 95 (11) :6396-6405
[8]  
Chiano CS, 1998, IEEE ELECTR DEVICE L, V19, P382
[9]   Organic single-crystal field-effect transistors [J].
de Boer, RWI ;
Gershenson, ME ;
Morpurgo, AF ;
Podzorov, V .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 2004, 201 (06) :1302-1331
[10]  
Dimitrakopoulos CD, 2002, ADV MATER, V14, P99, DOI 10.1002/1521-4095(20020116)14:2<99::AID-ADMA99>3.0.CO