High-frequency noise in AlGaN/GaN HFETs

被引：18

作者：

Nuttinck, S ^{[1
]}

Gebara, E

Laskar, J

Harris, A

机构：

[1] Georgia Inst Technol, Sch Elect & Comp Engn, Yamacraw Design Ctr, Atlanta, GA 30332 USA

[2] Quellan Inc, Atlanta, GA 30332 USA

[3] Georgia Tech Res Inst, Electroopt Environm & Mat Lab, Atlanta, GA 30332 USA

来源：

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS | 2003年 / 13卷 / 04期

关键词：

AlGaN/GaN HFETs; modeling; noise;

D O I：

10.1109/LMWC.2003.811057

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present in this letter the benefits of GaN-based electronic devices-for low-noise MMICs. A temperature-dependent two-temperature noise model for AlGaN/GaN HFETs is implemented on a wide range of bias conditions. This study enables to access the device high-frequency noise parameters, and allow a comparison of the noise performances with SiC and GaAs technologies.

引用

页码：149 / 151

页数：3

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