In situ growth of superconducting MgB2 thin films by molecular-beam epitaxy

被引：77

作者：

Ueda, K ^{[1
]}

Naito, M ^{[1
]}

机构：

[1] NTT Corp, NTT Basic Res Labs, Kanagawa 2430198, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 2003年 / 93卷 / 04期

关键词：

D O I：

10.1063/1.1537460

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The in situ growth of superconducting MgB2 thin films was examined from various perspectives. The paper discusses (1) growth temperature, (2) the effect of excess Mg, (3) the effect of residual gas during growth, (4) the effect of in situ annealing, (5) thickness dependence, and (6) the effect of substrates. Our results provide a guide to the preparation of high-quality superconducting MgB2 films for potential electronics applications. (C) 2003 American Institute of Physics.

引用

页码：2113 / 2120

页数：8

共 22 条

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Zeng, XH ;

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Xi, XX ;

Hu, YF ;

Wertz, E ;

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Tian, W ;

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Pan, XQ ;

Lettieri, J ;

Schlom, DG ;

Brubaker, CO ;

Liu, ZK ;

Li, Q .

APPLIED PHYSICS LETTERS, 2001, 79 (12) :1840-1842

[22] Growth mechanism of superconducting MgB2 films prepared by various methods [J].

Zhai, HY ;

Christen, HM ;

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Fleming, PH ;

Christen, DK ;

Lowndes, DH .

JOURNAL OF MATERIALS RESEARCH, 2001, 16 (10) :2759-2762

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