'Wrong bonds' in sputtered amorphous Ge2Sb2Te5

被引：72

作者：

Jovari, P.

Kaban, I.

Steiner, J.

Beuneu, B.

Schops, A.

Webb, A.

机构：

[1] Hungarian Acad Sci, Res Inst Solid State Phys & Opt, H-1525 Budapest, Hungary

[2] Tech Univ Chemnitz, Inst Phys, D-09107 Chemnitz, Germany

[3] Rhein Westfal TH Aachen, Inst Phys, D-52056 Aachen, Germany

[4] CEA Saclay, Lab Leon Brillouin, F-91191 Gif Sur Yvette, France

[5] HASYLAB Deutschen Elekt Synchroton, DESY, D-22603 Hamburg, Germany

来源：

JOURNAL OF PHYSICS-CONDENSED MATTER | 2007年 / 19卷 / 33期

关键词：

D O I：

10.1088/0953-8984/19/33/335212

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The structure of sputtered amorphous Ge2Sb2Te5 was investigated by high energy x-ray diffraction, neutron diffraction and Ge-, Sb- and Te K-edge EXAFS measurements. The five datasets were modelled simultaneously in the framework of the reverse Monte Carlo simulation technique. It was found that apart from Te-Sb and Te-Ge bonds existing in the crystalline phases, Ge Ge and Sb- Ge bonding is also significant in sputtered amorphous Ge2Sb2Te5. According to our results, all components obey the '8-N' rule.

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页数：9

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共 30 条

[21] On the partial structure factors of molten zinc chloride [J].

Neuefeind, J .

PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 2001, 3 (18) :3987-3993

[22] Density changes upon crystallization of Ge2Sb2.04Te4.74 films [J].

Njoroge, WK ;

Wöltgens, HW ;

Wuttig, M .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2002, 20 (01) :230-233

[23] Crystal structure of GeTe and Ge2Sb2Te5 meta-stable phase [J].

Nonaka, T ;

Ohbayashi, G ;

Toriumi, Y ;

Mori, Y ;

Hashimoto, H .

THIN SOLID FILMS, 2000, 370 (1-2) :258-261

[24] REVERSIBLE ELECTRICAL SWITCHING PHENOMENA IN DISORDERED STRUCTURES [J].

OVSHINSKY, SR .

PHYSICAL REVIEW LETTERS, 1968, 21 (20) :1450-+

[25] AMORPHOUS SILICA STUDIED BY HIGH-ENERGY X-RAY-DIFFRACTION [J].

POULSEN, HF ;

NEUEFEIND, J ;

NEUMANN, HB ;

SCHNEIDER, JR ;

ZEIDLER, MD .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 188 (1-2) :63-74

[26] Crystal nucleation and growth processes in Ge2Sb2Te5 [J].

Privitera, S ;

Bongiorno, C ;

Rimini, E ;

Zonca, R .

APPLIED PHYSICS LETTERS, 2004, 84 (22) :4448-4450

[27] Large displacement of germanium atoms in crystalline Ge2Sb2Te5 -: art. no. 081904 [J].

Shamoto, S ;

Yamada, N ;

Matsunaga, T ;

Proffen, T ;

Richardson, JW ;

Chung, JH ;

Egami, T .

APPLIED PHYSICS LETTERS, 2005, 86 (08) :1-3

[28] EXAFS study of Sb-Te alloy films [J].

Tani, K ;

Yiwata, N ;

Harigaya, M ;

Emura, S ;

Nakata, Y .

JOURNAL OF SYNCHROTRON RADIATION, 2001, 8 :749-751

[29] Laser induced crystallization of amorphous Ge2Sb2Te5 films [J].

Weidenhof, V ;

Friedrich, I ;

Ziegler, S ;

Wuttig, M .

JOURNAL OF APPLIED PHYSICS, 2001, 89 (06) :3168-3176

[30] Reverse Monte Carlo analysis of extended x-ray absorption fine structure spectra of monoclinic and amorphous zirconia [J].

Winterer, M .

JOURNAL OF APPLIED PHYSICS, 2000, 88 (10) :5635-5644