Memory effect of CdSe/ZnS nanoparticles embedded in a conducting poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] polymer layer

被引：46

作者：

Li, Fushan ^{[1
]}

Son, Dong-Ick ^{[1
]}

Cha, Han-Moe ^{[1
]}

Seo, Seung-Mi ^{[1
]}

Kim, Bong-Jun ^{[1
]}

Kim, Hyuk-Ju ^{[1
]}

Jung, Jae-Hun ^{[1
]}

Kim, Tae Whan ^{[1
]}

机构：

[1] Hanyang Univ, Adv Semicond Res Ctr, Div Elect & Comp Engn, Seoul 133791, South Korea

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 22期

关键词：

D O I：

10.1063/1.2745219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Capacitance-voltage (C-V) measurements on Au/a conducting poly[2-methoxy-5-(2-ethylhexyloxy)-1,4-phenylene-vinylene] polymer layer containing core/shell CdSe/ZnS nanoparticles (hybrid layer)/indium tin oxide (ITO) coated glass and Al/hybrid layer/ITO coated glass capacitors at 300 K showed metal-insulator-semiconductor behavior with a large flatband voltage shift. This shift was due to the existence of the CdSe/ZnS nanoparticles, indicative of trapping, storing, and emission of charge carriers in the CdSe/ZnS nanoparticles. Symmetric and asymmetric C-V characteristics appeared in the Al/hybrid layer/ITO coated glass and Au/hybrid layer/ITO coated glass capacitors, respectively. A dipolar carrier trapping model is proposed to explain the symmetric behavior in the C-V curve. (C) 2007 American Institute of Physics.

引用

页数：3

共 18 条

[1] Energy-transfer pumping of semiconductor nanocrystals using an epitaxial quantum well [J].

Achermann, M ;

Petruska, MA ;

Kos, S ;

Smith, DL ;

Koleske, DD ;

Klimov, VI .

NATURE, 2004, 429 (6992) :642-646

[2] Mechanism for bistability in organic memory elements [J].

Bozano, LD ;

Kean, BW ;

Deline, VR ;

Salem, JR ;

Scott, JC .

APPLIED PHYSICS LETTERS, 2004, 84 (04) :607-609

[3] Negative differential resistance effect in organic devices based on an anthracene derivative [J].

Chen, Jiangshan ;

Xu, Liling ;

Lin, Jian ;

Geng, Yanhou ;

Wang, Lixiang ;

Ma, Dongge .

APPLIED PHYSICS LETTERS, 2006, 89 (08)

[4] Tunable nonlocal spin control in a coupled-quantum dot system [J].

Craig, NJ ;

Taylor, JM ;

Lester, EA ;

Marcus, CM ;

Hanson, MP ;

Gossard, AC .

SCIENCE, 2004, 304 (5670) :565-567

[5] CdSe nanocrystal quantum-dot memory [J].

Fischbein, MD ;

Drndic, M .

APPLIED PHYSICS LETTERS, 2005, 86 (19) :1-3

[6] Memory effect of ZnO nanocrystals embedded in an insulating polyimide layer [J].

Jung, JH ;

Jin, JY ;

Lee, I ;

Kim, TW ;

Roh, HG ;

Kim, YH .

APPLIED PHYSICS LETTERS, 2006, 88 (11)

[7] Electrical study of Ge-nanocrystal-based metal-oxide-semiconductor structures for p-type nonvolatile memory applications [J].

Kanoun, M ;

Souifi, A ;

Baron, T ;

Mazen, F .

APPLIED PHYSICS LETTERS, 2004, 84 (25) :5079-5081

[8] Stable, three layered organic memory devices from C60 molecules and insulating polymers [J].

Kanwal, Alokik ;

Chhowalla, Manish .

APPLIED PHYSICS LETTERS, 2006, 89 (20)

[9] Formation and electrical properties of Ni1-xFex nanocrystals embedded in a polyimide layers for applications as nonvolatile flash memories -: art. no. 032904 [J].

Kim, JH ;

Jin, JY ;

Jung, JH ;

Lee, I ;

Kim, TW ;

Lim, SK ;

Yoon, CS ;

Kim, YH .

APPLIED PHYSICS LETTERS, 2005, 86 (03) :1-3

[10] Electron-beam-induced formation of Zn nanocrystal islands in a SiO2 layer [J].

Kim, Tae Whan ;

Shin, Jae Won ;

Lee, Jeong Yong ;

Jung, Jae Hun ;

Lee, Jung Wook ;

Choi, Won Kook ;

Jin, Sungho .

APPLIED PHYSICS LETTERS, 2007, 90 (05)

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