Negative differential resistance effect in organic devices based on an anthracene derivative

被引：63

作者：

Chen, Jiangshan ^{[1
]}

Xu, Liling ^{[1
]}

Lin, Jian ^{[1
]}

Geng, Yanhou ^{[1
]}

Wang, Lixiang ^{[1
]}

Ma, Dongge ^{[1
]}

机构：

[1] Chinese Acad Sci, Changchun Inst Appl Chem, Grad Sch, State Key Lab Polymer Phys & Chem, Changchun 130022, Peoples R China

来源：

APPLIED PHYSICS LETTERS | 2006年 / 89卷 / 08期

基金：

中国国家自然科学基金;

关键词：

D O I：

10.1063/1.2338513

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The authors observed a negative differential resistance (NDR) in organic devices consisting of 9,10-bis-(9,9-diphenyl-9H-fluoren-2-yl)-anthracene (DPFA) sandwiched between Ag and indium tin oxide electrodes. The large NDR shown in current-voltage characteristics is reproducible, resulting in that the organic devices can be electrically switched between a high conductance state (on state) and a low conductance state (off state). It can be found that the currents at both on to off states are space-charge limited and attributed to the electron traps at the Ag/DPFA interface. The large and reproducible NDR makes the devices of tremendous potential in low power memory and logic circuits. (c) 2006 American Institute of Physics.

引用

页数：3

共 26 条

[1] Organic materials and thin-film structures for cross-point memory cells based on trapping in metallic nanoparticles [J].