Room-temperature negative differential resistance in nanoscale molecular junctions

被引：487

作者：

Chen, J

Wang, W

Reed, MA

Rawlett, AM

Price, DW

Tour, JM

机构：

[1] Yale Univ, Dept Elect Engn, New Haven, CT 06520 USA

[2] Yale Univ, Dept Appl Phys, New Haven, CT 06520 USA

[3] Yale Univ, Dept Phys, New Haven, CT 06520 USA

[4] Rice Univ, Dept Chem, Houston, TX 77005 USA

[5] Rice Univ, Ctr Nanoscale Sci & Technol, Houston, TX 77005 USA

来源：

APPLIED PHYSICS LETTERS | 2000年 / 77卷 / 08期

关键词：

D O I：

10.1063/1.1289650

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Molecular devices are reported utilizing active self-assembled monolayers containing the nitroamine [2'-amino-4,4'-di(ethynylphenyl)-5'-nitro-1-benzenethiolate] or the nitro compound [4,4'-di(ethynylphenyl)-2'-nitro-1-benzenethiolate] as the active components. Both of these compounds have active redox centers. Current-voltage measurements of the devices exhibited negative differential resistance at room temperature and an on-off peak-to-valley ratio in excess of 1000:1 at low temperature. (C) 2000 American Institute of Physics. [S0003-6951(00)03234-4].

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页码：1224 / 1226

页数：3

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