PEAK-TO-VALLEY CURRENT RATIOS AS HIGH AS 50-1 AT ROOM-TEMPERATURE IN PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES

被引：56

作者：

SMET, JH ^{[1
]}

BROEKAERT, TPE ^{[1
]}

FONSTAD, CG ^{[1
]}

机构：

[1] MIT,DEPT MAT SCI & ENGN,CAMBRIDGE,MA 02139

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 05期

关键词：

D O I：

10.1063/1.351085

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with the highest peak-to-valley current ratios reported to date have been fabricated on InP substrates with molecular beam epitaxy. Peak-to-valley current ratios as high as 50:1 at 300 K are obtained. The majority of the devices on the sample have a peak-to-valley current ratio of 42 at 300 K and 85 at 77 K.

引用

收藏

页码：2475 / 2477

页数：3

相关论文

共 7 条

[1] PSEUDOMORPHIC IN0.53GA0.47AS/ALAS/INAS RESONANT TUNNELING DIODES WITH PEAK-TO-VALLEY CURRENT RATIOS OF 30 AT ROOM-TEMPERATURE [J].

BROEKAERT, TPE ;

LEE, W ;

FONSTAD, CG .

APPLIED PHYSICS LETTERS, 1988, 53 (16) :1545-1547

[2] GROWTH BY MOLECULAR-BEAM EPITAXY AND CHARACTERIZATION OF HIGH-PURITY GAAS AND ALGAAS [J].

HEIBLUM, M ;

MENDEZ, EE ;

OSTERLING, L .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) :6982-6988

[3] A PSEUDOMORPHIC IN0.53GA0.47AS ALAS RESONANT TUNNELING BARRIER WITH A PEAK-TO-VALLEY CURRENT RATIO OF 14 AT ROOM-TEMPERATURE [J].

INATA, T ;

MUTO, S ;

NAKATA, Y ;

SASA, S ;

FUJII, T ;

HIYAMIZU, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1987, 26 (08) :L1332-L1334

[4] RESONANT TUNNELING IN ALSB/INAS/ALSB DOUBLE-BARRIER HETEROSTRUCTURES [J].

LUO, LF ;

BERESFORD, R ;

WANG, WI .

APPLIED PHYSICS LETTERS, 1988, 53 (23) :2320-2322

[5] LATTICE MATCHED AND PSEUDOMORPHIC IN0.53GA0.47AS INXAL1-XAS RESONANT TUNNELING DIODES WITH HIGH-CURRENT PEAK-TO-VALLEY RATIO FOR MILLIMETER-WAVE POWER-GENERATION [J].

MEHDI, I ;

HADDAD, G .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (05) :2643-2646

[6] PHYSICS OF RESONANT TUNNELING - THE ONE-DIMENSIONAL DOUBLE-BARRIER CASE [J].

RICCO, B ;

AZBEL, MY .

PHYSICAL REVIEW B, 1984, 29 (04) :1970-1981

[7] LOW-TEMPERATURE MBE GROWTH OF HIGH-QUALITY ALGAAS [J].

SHIRAKI, Y ;

MISHIMA, T ;

MORIOKA, M .

JOURNAL OF CRYSTAL GROWTH, 1987, 81 (1-4) :164-168