LATTICE MATCHED AND PSEUDOMORPHIC IN0.53GA0.47AS INXAL1-XAS RESONANT TUNNELING DIODES WITH HIGH-CURRENT PEAK-TO-VALLEY RATIO FOR MILLIMETER-WAVE POWER-GENERATION

被引：8

作者：

MEHDI, I

HADDAD, G

机构：

[1] Center for High-Frequency Microelectronics, Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 67卷 / 05期

关键词：

D O I：

10.1063/1.345472

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lattice matched and pseudomorphic In0.53 Ga0.47 As/InxAl1-x As resonant tunneling diodes, with some of the best dc performance ever reported, have been fabricated and their high-frequency power generation capabilities have been theoretically studied. For the lattice matched system a peak-to-valley ratio of 7 (300 K) and 21 (77 K) with a peak current density of approximately 10 kA/cm2 is measured. The pseudomorphic system with a In0.53 Ga0.47 As well and AlAs barriers results in a peak-to-valley ratio of 24 (300 K) and 51 (77 K) with a peak current density of approximately 15 kA/cm2. Based on a quasistatic large signal waveform analysis the power generating capability of the InGaAs device is compared with a GaAs based device with an equally high peak current density and it is found that for very high-frequency power applications the InGaAs based device is better.

引用

页码：2643 / 2646

页数：4

共 18 条

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