Optoelectronic properties of graphene thin films prepared by thermal reduction of graphene oxide

被引：53

作者：

Cuong, Tran Viet ^{[1
]}

Pham, Viet Hung ^{[1
]}

Quang Trung Tran ^{[2
]}

Chung, Jin Suk ^{[1
]}

Shin, Eun Woo ^{[1
]}

Kim, Jae Seong ^{[1
]}

Kim, Eui Jung ^{[1
]}

机构：

[1] Univ Ulsan, Dept Chem Engn, Ulsan 680749, South Korea

[2] Ho Chi Minh City Univ Nat Sci, Dept Solid State Phys, Fac Phys, Ho Chi Minh City, Vietnam

来源：

MATERIALS LETTERS | 2010年 / 64卷 / 06期

关键词：

Graphene oxide; Thin films; Luminescence; Optical materials and properties; GRAPHITE OXIDE; CARBON; PHOTOLUMINESCENCE;

D O I：

10.1016/j.matlet.2010.01.009

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Graphene thin films have been prepared by thermal reduction of graphene oxide. Raising the reduction temperature results in a red-shift of the G peak in Raman spectra. The reduction temperature turns out to strongly affect the morphology of the prepared graphene film. Photoluminescence (PL) results show that the band gap of graphene can be tuned by varying the reduction temperature. The thermal reduction process has been optimized in an effort to minimize the formation of wrinkles/folds on the graphene surface leading to enhanced PL and Raman peak intensities and reduced electrical sheet resistance. (C) 2010 Elsevier B.V. All rights reserved.

引用

页码：765 / 767

页数：3

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