Magnetism of Co-doped ZnO thin films

被引：173

作者：

Gacic, Milan

Jakob, Gerhard

Herbort, Christian

Adrian, Hermann

Tietze, Thomas

Brueck, Sebastian

Goering, Eberhard

机构：

[1] Univ Mainz, Inst Phys, D-55099 Mainz, Germany

[2] Max Planck Inst Med Res, D-70569 Stuttgart, Germany

来源：

PHYSICAL REVIEW B | 2007年 / 75卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.75.205206

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have investigated magnetic and transport properties of 5% Co-doped and undoped ZnO thin films deposited on r plane Al2O3 substrates by pulsed laser deposition. The Co doped films showed paramagnetic and ferromagnetic behavior as well as a high magnetoresistance and a small anomalous Hall effect. In a range of 0 to 5 T at low temperatures we observed a double sign change of the magnetoresistance. For undoped ZnO films, prepared by the same conditions, only a negative MR was observed, but surprisingly also a very small anomalous Hall effect. We explain our results by applying a semiempirical fit consisting of a positive and a negative contribution to the magnetoresistance. Using x-ray magnetic circular dichroism we investigated element specific magnetic moments in Co-doped laser ablated ZnO films. As the Co atoms show a paramagnetic behavior, we attribute the ferromagnetism to a spontaneously spin impurity band induced by oxygen vacancies and defects due to the transition metal doping and/or interface stress to the substrate.

引用

页数：8

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