Oscillatory nonmetal-metal transitions of ultrathin Sb overlayers on a GaAs(110) substrate

被引:25
作者
Cho, JH
Niu, Q
Zhang, ZY
机构
[1] Oak Ridge Natl Lab, Div Solid State, Oak Ridge, TN 37831 USA
[2] Univ Texas, Dept Phys, Austin, TX 78712 USA
[3] Univ Tennessee, Dept Phys, Knoxville, TN USA
关键词
D O I
10.1103/PhysRevLett.80.3582
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
Based on first-principles calculations, an Sb film on GaAs(110) is found to be nonmetallic at 1 and 3 monolayer (ML) coverages, and metallic at 2, 4, and higher ML coverages. These unusual oscillatory nonmetal-metal transitions are explained in terms of a generalized Wilson rule, constrained by the relative magnitudes of the separation and width of the: subbands derived from the quantum-well states. The present study also establishes the existence of magic stability of the film at the odd numbers of monolayers, and strong interlayer spacing oscillations.
引用
收藏
页码:3582 / 3585
页数:4
相关论文
共 34 条
  • [1] Direct determination of multiple adsorption sites using chemical-shift photoelectron diffraction: Sb/GaAs(110)
    Ascolani, H
    Avila, J
    Franco, N
    Asensio, MC
    [J]. PHYSICAL REVIEW LETTERS, 1997, 78 (13) : 2604 - 2607
  • [2] DIMENSIONALITY AND SIZE EFFECTS IN SIMPLE METALS
    BATRA, IP
    CIRACI, S
    SRIVASTAVA, GP
    NELSON, JS
    FONG, CY
    [J]. PHYSICAL REVIEW B, 1986, 34 (12): : 8246 - 8257
  • [3] EPITAXIAL CONTINUED-LAYER STRUCTURE OF SB ON GAAS(110) AS OBSERVED BY GRAZING-INCIDENCE X-RAY-DIFFRACTION
    BETTI, MG
    MARIANI, C
    JEDRECY, N
    PINCHAUX, R
    RUOCCO, A
    SAUVAGESIMKIN, M
    [J]. PHYSICAL REVIEW B, 1994, 50 (19): : 14336 - 14339
  • [4] GROUND-STATE OF THE ELECTRON-GAS BY A STOCHASTIC METHOD
    CEPERLEY, DM
    ALDER, BJ
    [J]. PHYSICAL REVIEW LETTERS, 1980, 45 (07) : 566 - 569
  • [5] Geometry and core-level shifts of an adsorbed Sb monolayer on GaAs(110)
    Cho, JH
    Zhang, ZY
    Lee, SH
    Kang, MH
    [J]. PHYSICAL REVIEW B, 1998, 57 (03): : 1352 - 1355
  • [6] Step height oscillations during layer-by-layer growth of Pb on Ge(001)
    Crottini, A
    Cvetko, D
    Floreano, L
    Gotter, R
    Morgante, A
    Tommasini, F
    [J]. PHYSICAL REVIEW LETTERS, 1997, 79 (08) : 1527 - 1530
  • [7] DOWBEN PA, IN PRESS REV MOD PHY
  • [8] DYNAMICAL ANALYSIS OF LOW-ENERGY ELECTRON-DIFFRACTION INTENSITIES FROM GAAS(110)-P(1X1)-SB(1ML)
    DUKE, CB
    PATON, A
    FORD, WK
    KAHN, A
    CARELLI, J
    [J]. PHYSICAL REVIEW B, 1982, 26 (02): : 803 - 814
  • [9] FERMI-LEVEL PINNING AT THE SB/GAAS(110) SURFACE STUDIED BY SCANNING TUNNELING SPECTROSCOPY
    FEENSTRA, RM
    MARTENSSON, P
    [J]. PHYSICAL REVIEW LETTERS, 1988, 61 (04) : 447 - 450
  • [10] QUANTUM-SIZE EFFECTS IN WORK-FUNCTIONS OF FREESTANDING AND ADSORBED THIN METAL-FILMS
    FEIBELMAN, PJ
    HAMANN, DR
    [J]. PHYSICAL REVIEW B, 1984, 29 (12): : 6463 - 6467