Improved photoluminescence of pulsed-laser-ablated Y2O3:Eu3+ thin-film phosphors by Gd substitution

被引：69

作者：

Bae, JS ^{[1
]}

Jeong, JH

Yi, SS

Park, JC

机构：

[1] Pukyong Natl Univ, Dept Phys, Pusan 608737, South Korea

[2] Silla Univ, Nanophoton Res Ctr, Dept Photon, Pusan 617736, South Korea

[3] Silla Univ, Nanophoton Res Ctr, Dept Nanoengn, Pusan 617736, South Korea

来源：

APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 21期

关键词：

D O I：

10.1063/1.1573360

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Gd-substituted Y2-xGdxO3:Eu3+ luminescent thin films have been grown on Al2O3 (0001) substrates using pulsed-laser deposition. The films grown under different deposition conditions have been characterized using microstructural and luminescent measurements. The crystallinity, surface morphology, and photoluminescence (PL) of the films are highly dependent on the amount of Gd. The PL brightness data obtained from Y2-xGdxO3:Eu3+ films grown under optimized conditions have indicated that the PL brightness is more dependent on the surface roughness than on the crystallinity of the films. In particular, the incorporation of Gd into Y2O3 lattice could induce a remarkable increase of PL. The highest emission intensity was observed with Y1.35Gd0.60Eu0.05O3, thin film whose brightness was increased by a factor of 3.1 in comparison with that of Y2O3:Eu3+ films. This phosphor has promise for application to the flat panel displays. (C) 2003 American Institute of Physics.

引用

页码：3629 / 3631

页数：3

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