Gain of the mode locked p-Ge laser in the low field region

被引：16

作者：

Hovenier, JN

Klaassen, TO

Wenckebach, WT

Muravjov, AV

Pavlov, SG

Shastin, VN

机构：

[1] Delft Univ Technol, Delft Inst Microelect & Submicron Technol, Dept Appl Phys, NL-2600 GA Delft, Netherlands

[2] Russian Acad Sci, Inst Phys Microstruct, Nizhnii Novgorod 603600, Russia

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 10期

关键词：

D O I：

10.1063/1.120995

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Following the earlier observation of active mode locking in the high field region of the Voigt configured p-Ge intervalence band laser, presently mode locking in the low field region is also reported. The experimental results on the effective small signal gain for active-as well as for self-mode locked operation are given. (C) 1998 American Institute of Physics. [S0003-6951(98)02410-3].

引用

页码：1140 / 1142

页数：3

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