K-band 3-bit low-loss distributed MEMS phase shifter

被引：67

作者：

Liu, Y ^{[1
]}

Borgioli, A ^{[1
]}

Nagra, AS ^{[1
]}

York, RA ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

来源：

IEEE MICROWAVE AND GUIDED WAVE LETTERS | 2000年 / 10卷 / 10期

关键词：

distributed phase shifter; K-band; MEMS; multibit; switches;

D O I：

10.1109/75.877230

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, we present a 3-bit K-band distributed phase shifter circuit that employs microelectromechanical systems (MEMS) capacitive switches, The measured results demonstrate an average 1.7 dB insertion loss at 26 GHz with return loss better than -7 dB, Insertion phase shifts of all switching states are measured and show phase error less than 8.5 degrees for all states, The low loss K-band 3-bit phase shifter demonstrated in this letter can potentially be extended to more-bit-controlled phase shifter applications.

引用

页码：415 / 417

页数：3

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