Characteristics of GaAs and AlGaAs homojunction avalanche photodiodes with thin multiplication regions

被引：20

作者：

Anselm, KA ^{[1
]}

Yuan, P ^{[1
]}

Hu, C ^{[1
]}

Lenox, C ^{[1
]}

Nie, H ^{[1
]}

Kinsey, G ^{[1
]}

Campbell, JC ^{[1
]}

Streetman, BG ^{[1
]}

机构：

[1] Univ Texas, Dept Elect & Comp Engn, Microelect Res Ctr, Austin, TX 78712 USA

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 26期

关键词：

D O I：

10.1063/1.120533

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The gain and noise of thin GaAs and Al0.2Ga0.8As homojunction avalanche photodiodes were measured. The gain and the excess noise factor were found to be significantly lower than would be expected using ionization coefficients reported in the literature. The discrepancy is believed to be due to physical effects that become significant in thin multiplication layers. It is shown that the gain and excess noise under electron injection can be accurately fit using conventional models with width-dependent ionization coefficients. (C) 1997 American Institute of Physics.

引用

页码：3883 / 3885

页数：3

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