A WIDE-BANDWIDTH LOW-NOISE INGAASP-INALAS SUPERLATTICE AVALANCHE PHOTODIODE WITH A FLIP-CHIP STRUCTURE FOR WAVELENGTHS OF 1.3 AND 1.55 MU-M

This paper reports the fabrication of a flip-chip InGaAsP-InAlAs superlattice avalanche photodiode using gas source molecular beam epitaxy. The incident light reaches the InGaAs photoabsorption layer through the InP substrate and an InGaAsP-InAlAs superlattice multiplication region which are transparent for wavelengths of 1.55 and 1.3 mum. The light reflection by the electrode enables the absorption layer to be as thin as 0.8 mum without significantly reducing the quantum efficiency. A maximum bandwidth of 17 GHz was obtained at a low multiplication factor because the transit time through the absorption layer is reduced.