MULTIGIGABIT-PER-SECOND AVALANCHE PHOTODIODE LIGHTWAVE RECEIVERS

[1] EXPERIENCES WITH AN OPTICAL LONG-HAUL 2.24 GBIT/S TRANSMISSION-SYSTEM AT A WAVELENGTH OF 1.3 MU-M [J]. ELECTRONICS LETTERS, 1982, 18 (17) : 746 - 748

[2] TEMPORAL AND FREQUENCY-RESPONSE OF AVALANCHE PHOTO-DIODES FROM NOISE MEASUREMENTS [J]. APPLIED OPTICS, 1980, 19 (20): : 3496 - 3499

[3] REACH-THROUGH TYPE PLANAR INGAAS/INP AVALANCHE PHOTODIODE FABRICATED BY CONTINUOUS VAPOR-PHASE EPITAXY [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) : 256 - 264

[4] TUNNELING CURRENT IN INGAAS AND OPTIMUM DESIGN FOR INGAAS-INP AVALANCHE PHOTO-DIODE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L277 - L280

[5] EFFECT OF AVALANCHE BUILDUP TIME ON AVALANCHE PHOTODIODE SENSITIVITY [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (03) : 251 - 255

[6] NOISE BEHAVIOR OF GAAS FIELD-EFFECT TRANSISTORS WITH SHORT GATE LENGTHS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 674 - +

[7] BLANK LC, 1987, 6TH P INT C INT OPT

[8] INGAAS PIN PHOTODETECTORS WITH MODULATION RESPONSE TO MILLIMETER WAVELENGTHS [J]. ELECTRONICS LETTERS, 1985, 21 (18) : 812 - 814

[9] OPTICAL RECEIVERS FOR LIGHTWAVE COMMUNICATION-SYSTEMS [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (06) : 1281 - 1300

[10] PINFET HYBRID OPTICAL RECEIVERS FOR 1.2 GBIT/S TRANSMISSION-SYSTEMS OPERATING AT 1.3-MU-M AND 1.55-MU-M WAVELENGTH [J]. ELECTRONICS LETTERS, 1984, 20 (21) : 894 - 896

[1] EXPERIENCES WITH AN OPTICAL LONG-HAUL 2.24 GBIT/S TRANSMISSION-SYSTEM AT A WAVELENGTH OF 1.3 MU-M [J]. ELECTRONICS LETTERS, 1982, 18 (17) : 746 - 748

[2] TEMPORAL AND FREQUENCY-RESPONSE OF AVALANCHE PHOTO-DIODES FROM NOISE MEASUREMENTS [J]. APPLIED OPTICS, 1980, 19 (20): : 3496 - 3499

[3] REACH-THROUGH TYPE PLANAR INGAAS/INP AVALANCHE PHOTODIODE FABRICATED BY CONTINUOUS VAPOR-PHASE EPITAXY [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) : 256 - 264

[4] TUNNELING CURRENT IN INGAAS AND OPTIMUM DESIGN FOR INGAAS-INP AVALANCHE PHOTO-DIODE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L277 - L280

[5] EFFECT OF AVALANCHE BUILDUP TIME ON AVALANCHE PHOTODIODE SENSITIVITY [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (03) : 251 - 255

[6] NOISE BEHAVIOR OF GAAS FIELD-EFFECT TRANSISTORS WITH SHORT GATE LENGTHS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1972, ED19 (05) : 674 - +

[7] BLANK LC, 1987, 6TH P INT C INT OPT

[8] INGAAS PIN PHOTODETECTORS WITH MODULATION RESPONSE TO MILLIMETER WAVELENGTHS [J]. ELECTRONICS LETTERS, 1985, 21 (18) : 812 - 814

[9] OPTICAL RECEIVERS FOR LIGHTWAVE COMMUNICATION-SYSTEMS [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1985, 3 (06) : 1281 - 1300

[10] PINFET HYBRID OPTICAL RECEIVERS FOR 1.2 GBIT/S TRANSMISSION-SYSTEMS OPERATING AT 1.3-MU-M AND 1.55-MU-M WAVELENGTH [J]. ELECTRONICS LETTERS, 1984, 20 (21) : 894 - 896