EFFECT OF AVALANCHE BUILDUP TIME ON AVALANCHE PHOTODIODE SENSITIVITY

[1] REACH-THROUGH TYPE PLANAR INGAAS/INP AVALANCHE PHOTODIODE FABRICATED BY CONTINUOUS VAPOR-PHASE EPITAXY [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) : 256 - 264

[2] AVALANCHE-PHOTODIODE FREQUENCY RESPONSE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) : 3705 - +

[3] GAIN-BANDWIDTH-LIMITED RESPONSE IN LONG-WAVELENGTH AVALANCHE PHOTODIODES [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1984, 2 (01) : 34 - 39

[4] OPTICAL REPEATER WITH HIGH-IMPEDANCE INPUT AMPLIFIER [J]. BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (04): : 629 - 643

[5] AVALANCHE BUILT-UP TIME OF GERMANIUM AVALANCHE PHOTODIODE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (07) : 1091 - 1092

[6] KIMURA T, 1980, IEEE T CIRCUITS SYST, V26, P987

[7] TIME DEPENDENCE OF AVALANCHE PROCESSES IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2787 - &

[8] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 164 - +

[9] GERMANIUM REACHTHROUGH AVALANCHE PHOTODIODES FOR OPTICAL COMMUNICATION-SYSTEMS AT 1.55-MU-M WAVELENGTH REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) : 971 - 977

[10] THE PHILOSOPHY OF PCM [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1948, 36 (11): : 1324 - 1331

[1] REACH-THROUGH TYPE PLANAR INGAAS/INP AVALANCHE PHOTODIODE FABRICATED BY CONTINUOUS VAPOR-PHASE EPITAXY [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1984, 20 (03) : 256 - 264

[2] AVALANCHE-PHOTODIODE FREQUENCY RESPONSE [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) : 3705 - +

[3] GAIN-BANDWIDTH-LIMITED RESPONSE IN LONG-WAVELENGTH AVALANCHE PHOTODIODES [J]. JOURNAL OF LIGHTWAVE TECHNOLOGY, 1984, 2 (01) : 34 - 39

[4] OPTICAL REPEATER WITH HIGH-IMPEDANCE INPUT AMPLIFIER [J]. BELL SYSTEM TECHNICAL JOURNAL, 1974, 53 (04): : 629 - 643

[5] AVALANCHE BUILT-UP TIME OF GERMANIUM AVALANCHE PHOTODIODE [J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1973, 12 (07) : 1091 - 1092

[6] KIMURA T, 1980, IEEE T CIRCUITS SYST, V26, P987

[7] TIME DEPENDENCE OF AVALANCHE PROCESSES IN SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2787 - &

[8] MULTIPLICATION NOISE IN UNIFORM AVALANCHE DIODES [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (01) : 164 - +

[9] GERMANIUM REACHTHROUGH AVALANCHE PHOTODIODES FOR OPTICAL COMMUNICATION-SYSTEMS AT 1.55-MU-M WAVELENGTH REGION [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (07) : 971 - 977

[10] THE PHILOSOPHY OF PCM [J]. PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1948, 36 (11): : 1324 - 1331