REACH-THROUGH TYPE PLANAR INGAAS/INP AVALANCHE PHOTODIODE FABRICATED BY CONTINUOUS VAPOR-PHASE EPITAXY

被引：13

作者：

ANDO, H

YAMAUCHI, Y

SUSA, N

机构：

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1984年 / 20卷 / 03期

关键词：

D O I：

10.1109/JQE.1984.1072376

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：256 / 264

页数：9

相关论文

共 34 条

[1] LOW-TEMPERATURE ZN-DIFFUSION AND CD-DIFFUSION PROFILES IN INP AND FORMATION OF GUARD RING IN INP AVALANCHE PHOTO-DIODES
ANDO, H
SUSA, N
KANBE, H
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (09) : 1408 - 1413
[2] TUNNELING CURRENT IN INGAAS AND OPTIMUM DESIGN FOR INGAAS-INP AVALANCHE PHOTO-DIODE
ANDO, H
KANBE, H
ITO, M
KANEDA, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (06) : L277 - L280
[3] HIGH-SPEED PLANAR INP/INGAAS AVALANCHE PHOTO-DIODE FABRICATED BY VAPOR-PHASE EPITAXY
ANDO, H
YAMAUCHI, Y
SUSA, N
[J]. ELECTRONICS LETTERS, 1983, 19 (14) : 543 - 545
[4] IONIZATION COEFFICIENT MEASUREMENT IN GAAS BY USING MULTIPLICATION NOISE CHARACTERISTICS
ANDO, H
KANBE, H
[J]. SOLID-STATE ELECTRONICS, 1981, 24 (07) : 629 - 634
[5] IONIZATION COEFFICIENTS OF ELECTRONS AND HOLES IN INP
ARMIENTO, CA
GROVES, SH
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (04) : 333 - 335
[6] ELECTRON AND HOLE IMPACT IONIZATION COEFFICIENTS IN INP DETERMINED BY PHOTOMULTIPLICATION MEASUREMENTS
COOK, LW
BULMAN, GE
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (07) : 589 - 591
[7] AVALANCHE MULTIPLICATION AND NOISE CHARACTERISTICS OF LOW-DARK-CURRENT GAINASP-INP AVALANCHE PHOTODETECTORS
DIADIUK, V
GROVES, SH
HURWITZ, CE
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (09) : 807 - 810
[8] AVALANCHE-PHOTODIODE FREQUENCY RESPONSE
EMMONS, RB
[J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) : 3705 - +
[9] AN N-IN0.53GA0.47AS-N-INP RECTIFIER
FORREST, SR
KIM, OK
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (09) : 5838 - 5842
[10] EXCESS-NOISE AND RECEIVER SENSITIVITY MEASUREMENTS OF IN0.53GA0.47AS-INP AVALANCHE PHOTO-DIODES
FORREST, SR
WILLIAMS, GF
KIM, OK
SMITH, RG
[J]. ELECTRONICS LETTERS, 1981, 17 (24) : 917 - 919

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