OPTICAL RECEIVERS FOR LIGHTWAVE COMMUNICATION-SYSTEMS

被引：12

作者：

BRAIN, M ^{[1
]}

LEE, TP ^{[1
]}

机构：

[1] BELL COMMUN RES, MURRAY HILL, NJ 07974 USA

来源：

JOURNAL OF LIGHTWAVE TECHNOLOGY | 1985年 / 3卷 / 06期

关键词：

D O I：

10.1109/JLT.1985.1074346

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1281 / 1300

页数：20

共 146 条

[1] LOW-TEMPERATURE ZN-DIFFUSION AND CD-DIFFUSION PROFILES IN INP AND FORMATION OF GUARD RING IN INP AVALANCHE PHOTO-DIODES
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[2] INGAAS-INP SEPARATED ABSORPTION AND MULTIPLICATION REGIONS AVALANCHE PHOTO-DIODE USING LIQUID-PHASE AND VAPOR-PHASE EPITAXIES
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 250 - 254
[3] CHARACTERISTICS OF GERMANIUM AVALANCHE PHOTO-DIODES IN WAVELENGTH REGION OF 1-1.6 MU-M
ANDO, H
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[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1978, 14 (11) : 804 - 809
[4] HIGH-SPEED PLANAR INP/INGAAS AVALANCHE PHOTO-DIODE FABRICATED BY VAPOR-PHASE EPITAXY
ANDO, H
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[J]. ELECTRONICS LETTERS, 1983, 19 (14) : 543 - 545
[5] INGAAS/INP MESA PHOTODETECTOR PASSIVATED WITH SILICON DIOXIDE
ANTELL, GR
MURISON, RF
[J]. ELECTRONICS LETTERS, 1984, 20 (22) : 919 - 920
[6] REDUCTION OF BACKGATING IN GAAS/ALGAAS MESFETS BY OPTIMIZATION OF ACTIVE-LAYER BUFFER-LAYER INTERFACE
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MORKOC, H
[J]. ELECTRONICS LETTERS, 1984, 20 (09) : 376 - 378
[7] INGAAS DETECTOR FOR 1.0-1.7-MUM WAVELENGTH RANGE
BACHMANN, KJ
SHAY, JL
[J]. APPLIED PHYSICS LETTERS, 1978, 32 (07) : 446 - 448
[8] OPTICAL FIBER SYSTEM TRIALS AT 8 MBITS-S AND 140-MBITS-S
BERRY, RW
BRACE, DJ
RAVENSCROFT, IA
[J]. IEEE TRANSACTIONS ON COMMUNICATIONS, 1978, 26 (07) : 1020 - 1027
[9] LONG-SPAN OPTICAL-TRANSMISSION EXPERIMENT OVER 222.8 KM OF COMMERCIAL MONOMODE FIBER AT 140 MBIT/S AND 1.525 MU-M
BICKERS, L
BLANK, LC
WALKER, SD
[J]. ELECTRONICS LETTERS, 1985, 21 (07) : 267 - 268
[10] PINFET HYBRID OPTICAL RECEIVERS FOR 1.2 GBIT/S TRANSMISSION-SYSTEMS OPERATING AT 1.3-MU-M AND 1.55-MU-M WAVELENGTH
BRAIN, MC
SMYTH, PP
SMITH, DR
WHITE, BR
CHIDGEY, PJ
[J]. ELECTRONICS LETTERS, 1984, 20 (21) : 894 - 896

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