Luminescence and stimulated emission in zinc oxide nanoparticles, films, and crystals

被引：11

作者：

Xiong, G ^{[1
]}

Wilkinson, J ^{[1
]}

Lyles, J ^{[1
]}

Ucer, KB ^{[1
]}

Williams, RT ^{[1
]}

机构：

[1] Wake Forest Univ, Dept Phys, Winston Salem, NC 27109 USA

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 2003年 / 158卷 / 1-6期

基金：

美国国家科学基金会;

关键词：

ZnO; photoluminscence; lifetime; p-n junction;

D O I：

10.1080/1042015022000037607

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

ZnO has attracted attention as a candidate material for ultraviolet light-emitting devices. Its 3.37-eV band gap is comparable to that of GaN, and single crystal substrates can be grown. Control of p-type conductivity in ZnO is under study in several laboratories including ours. We report streak camera measurements of time-resolved luminescence and stimulated emission excited in single crystal, film, and. particle samples under excitation by 300 fs laser pulses at temperatures from 17 K to 295 K. We also describe p-n junctions formed by control of oxygen pressure in reactive sputtering of ZnO films, and results of introducing nitrogen during reactive sputtering.

引用

页码：83 / 88

页数：6

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