Stress and relief of misfit strain of Ge/Si(001)

被引：65

作者：

Wedler, G

Walz, J

Hesjedal, T

Chilla, E

Koch, R

机构：

[1] Free Univ Berlin, Inst Phys Expt, D-14195 Berlin, Germany

[2] Paul Drude Inst Festkorperelekt, D-10117 Berlin, Germany

来源：

PHYSICAL REVIEW LETTERS | 1998年 / 80卷 / 11期

关键词：

D O I：

10.1103/PhysRevLett.80.2382

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The intrinsic stress of the Stranski-Krastanov system Ge/Si(001) was investigated in the range 700-1050 K. Characteristic stress features indicate that the relief of the misfit strain proceeds mainly in two steps: (i) by the formation of 3D islands on top of the Ge wetting layer and (ii) via misfit dislocations in larger 3D islands and upon their percolation. The temperature dependence of strain relief by 3D islands as well as their nucleation and growth behavior support a kinetic pathway for 3D islanding.

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页码：2382 / 2385

页数：4

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