Two-dimensional dopant profiling of very large scale integrated devices using selective etching and atomic force microscopy

被引：20

作者：

Barrett, M ^{[1
]}

Dennis, M ^{[1
]}

Tiffin, D ^{[1
]}

Li, Y ^{[1
]}

Shih, CK ^{[1
]}

机构：

[1] UNIV TEXAS,DEPT PHYS,AUSTIN,TX 78712

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1996年 / 14卷 / 01期

关键词：

D O I：

10.1116/1.588492

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a detailed mapping of a two-dimensional dopant profile on a fully processed industrial sample with large dynamic range and high spatial resolution by utilizing a dopant-selective etching process and atomic force microscopy. The experimental profiling results show excellent agreement with those obtained from spreading resistance probe and secondary ion mass spectroscopy as corroborative methods. We also discuss the most critical factors which influence the applicability, reproducibility, and reliability of this dopant selective etching method. (C) 1996 American Vacuum Society.

引用

页码：447 / 451

页数：5