Ordering induced direct-indirect transformation in unstrained GaxIn1-xP for 0.76<x<0.78

被引：4

作者：

Bhusal, L. ^{[1
]}

Fluegel, B. ^{[1
]}

Steiner, M. A. ^{[1
]}

Mascarenhas, A. ^{[1
]}

机构：

[1] Natl Renewable Energy Lab, Golden, CO 80401 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2009年 / 106卷 / 11期

关键词：

conduction bands; gallium compounds; III-V semiconductors; indium compounds; MOCVD; photoluminescence; semiconductor epitaxial layers; time resolved spectra; valence bands; vapour phase epitaxial growth;

D O I：

10.1063/1.3266175

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

GaxIn1-xP alloys grown by metalorganic vapor phase epitaxy (MOVPE) are known to exhibit spontaneous long-range ordering that results in a modification of the alloy electronic band structure. Using time resolved and time integrated photoluminescence studies at 9 K, we demonstrate that the change in alloy ordering in GaxIn1-xP alloys can transform the conduction to valence band optical transition from direct to indirect for a given Ga concentration. This finding may enable sequential growth of alternate layers of high bandgap direct and indirect semiconductor alloys with similar lattice constants, opening various possibilities for device applications.

引用

页数：3

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Ordering induced direct-indirect transformation in unstrained GaxIn1-xP for 0.76&lt;x&lt;0.78

Ordering induced direct-indirect transformation in unstrained GaxIn1-xP for 0.76<x<0.78