Tungsten via poisoning caused by water trapped in embedded organic low-K dielectrics

被引：3

作者：

Ikeda, K ^{[1
]}

Hasegawa, T ^{[1
]}

Takunaga, K ^{[1
]}

Fukasawa, M ^{[1
]}

Kito, H ^{[1
]}

Miyamoto, T ^{[1
]}

Kadomura, S ^{[1
]}

机构：

[1] Sony Corp, CNC, LSI Business & Technol Dev Grp, Atsugi, Kanagawa 2430014, Japan

来源：

PROCEEDINGS OF THE IEEE 2000 INTERNATIONAL INTERCONNECT TECHNOLOGY CONFERENCE | 2000年

关键词：

D O I：

10.1109/IITC.2000.854311

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The control of hygroscopicity in dielectric films is one of the key technologies applied in the fabrication of multilevel interconnections. By experiment we identified a new water trap site formation in a silicon dioxide hard mask deposited on organic low-K film. The trapped water causes via poisoning of the organic low-K application in aluminum interconnections with tungsten electrodes. We showed that by inserting an out-gassing step and using a chemically formed film we can avoid this problem.

引用

页码：158 / 160

页数：3

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