High photoluminescence efficiency of InAs/InP self-assembled quantum dots emitting at 1.5-1.6 μm

被引：25

作者：

Lambert, B

Le Corre, A

Drouot, V

L'Haridon, H

Loualiche, S

机构：

[1] INSA Rennes, Phys Solides Lab, F-35043 Rennes, France

[2] France Telecom, CNET, PCO, DTD, F-22301 Lannion, France

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1998年 / 13卷 / 01期

关键词：

D O I：

10.1088/0268-1242/13/1/001

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Self-assembled InAs quantum dots emitting at 1.5-1.6 mu m with high efficiency have been grown by GSMBE on InP. One of the most important properties of quantum dots is the conservation of high radiative recombination efficiency at room temperature as opposed to the case of quantum wells. This properly has been evidenced on carefully grown quantum dots by photoluminescence measurements between 2 K and 300 K.

引用

页码：143 / 145

页数：3

共 13 条

[1]

Fafard S, 1996, APPL PHYS LETT, V68, P991, DOI 10.1063/1.116122

[2]

Frechengues S, 1997, APPL PHYS LETT, V71, P2818, DOI 10.1063/1.120145

[3] InAs quantum boxes: Highly efficient radiative traps for light emitting devices on Si [J].