TiO2 nanocrystal prepared by atomic-layer-deposition system for non-volatile memory application

被引：6

作者：

Lin, Cha-Hsin ^{[1
]}

Wang, Ching-Chiun ^{[1
]}

Tzeng, Pei-Jer ^{[1
]}

Maikap, Siddheswar ^{[1
]}

Lee, Heng-Yuan ^{[1
]}

Lee, Lurng-Shehng ^{[1
]}

Tsai, Ming-Jinn ^{[1
]}

机构：

[1] Ind Technol Res Inst, Elect & Opto Elect Res Labs, Hsinchu 310, Taiwan

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2007年 / 46卷 / 4B期

关键词：

annealing; TiO2; nanocrystal; memory; ALD;

D O I：

10.1143/JJAP.46.2523

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

TiO2 nanocrystals were successfully fabricated using an atomic-layer-deposition (ALD) system. A TiN/Al2O3-laminated structure was employed as a starting structure, and after appropriate annealing, TiN was oxidized and TiO2 nanocrystals were formed. Experimental results indicate that rapid thermal annealing (RTA) temperature and annealing time are very critical factors. Also, the thickness of each TiN layer in the TiN/Al2O3-laminated starting structure is critical for TiO2 nanocrystal formation. Capacitance-voltage (C-V) measurement evidenced that an optimal annealing condition exists and an optimal annealing temperature and annealing time mainly depend on the thickness of each TiN layer in the TiN/Al2O3-laminated starting structure.

引用

页码：2523 / 2526

页数：4

共 6 条

[1]

Lee C, 2003, 2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, P557

[2] Nickel nanocrystal formation on HfO2 dielectric for nonvolatile memory device applications -: art. no. 103505 [J].

Lee, JJ ;

Harada, Y ;

Pyun, JW ;

Kwong, DL .

APPLIED PHYSICS LETTERS, 2005, 86 (10) :1-3

[3] Microstructural evolution of metal-insulator-metal capacitor prepared by atomic-layer-deposition system at elevated temperature [J].

Lin, C. H. ;

Wang, C. C. ;

Tzeng, P. J. ;

Liang, C. S. ;

Lo, W. M. ;

Li, H. Y. ;

Lee, L. S. ;

Lo, S. C. ;

Chou, Y. W. ;

Tsai, M. J. .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (4B) :3036-3039

[4] Tungsten nanocrystals embedded in high-k materials for memory application -: art. no. 113110 [J].

Samanta, SK ;

Yoo, WJ ;

Samudra, G ;

Tok, ES ;

Bera, LK ;

Balasubramanian, N .

APPLIED PHYSICS LETTERS, 2005, 87 (11)

[5] Self-assembly of Ni nanocrystals on HfO2 and N-assisted Ni confinement for nonvolatile memory application -: art. no. 013107 [J].

Tan, Z ;

Samanta, SK ;

Yoo, WJ ;

Lee, S .

APPLIED PHYSICS LETTERS, 2005, 86 (01) :013107-1

[6] The effect of thermal treatment on the electrical properties of titanium nitride thin films by filtered arc plasma method [J].

Wang, JM ;

Liu, WG ;

Mei, T .

CERAMICS INTERNATIONAL, 2004, 30 (07) :1921-1924

← 1 →