The effect of thermal treatment on the electrical properties of titanium nitride thin films by filtered arc plasma method

被引:26
作者
Wang, JM [1 ]
Liu, WG [1 ]
Mei, T [1 ]
机构
[1] Nanyang Technol Univ, Sch EEE, Ctr Microelect, Sensor & Actuators Lab, Singapore 639798, Singapore
关键词
electrical properties; filtered arc plasma; TiN thin film; annealing;
D O I
10.1016/j.ceramint.2003.12.042
中图分类号
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
In this work, the titanium nitride (TiN) films were prepared by filtered are plasma (FAP) method with thickness ranging from 7 to 75 nm. The structure of TiN film was determined by X-ray diffraction (XRD). Sheet resistance (REsquare) and TCR were measured by four-point probe station and TCR measurement system respectively. The results indicate that REsquare and TCR of TiN films are strongly thickness-dependent. After annealed above their individual critical temperature (T,), all films experienced huge resistance increases and color variations. While annealed below T-c, most of TiN films exhibited better resistance stability and repeatability than as-deposited TiN film. For extremely thin TiN film, like 7 nm, after annealed below T-c, its TCR turned from positive to negative. T-c for different TiN film was found strongly thickness-dependent from 200 to 600 degreesC. (C) 2004 Elsevier Ltd and Techna Group S.r.l. All rights reserved.
引用
收藏
页码:1921 / 1924
页数:4
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