Photoluminescence of various Zn1-xCdxTe/ZnTe heterostructures grown by MBE on GaAs(001) and ZnTe(001) substrates:: temperature dependences

被引：13

作者：

Bagaev, VS ^{[1
]}

Zaitsev, VV ^{[1
]}

Onishchenko, EE ^{[1
]}

Sadofyev, YG ^{[1
]}

机构：

[1] Russian Acad Sci, PN Lebedev Phys Inst, Solid State Phys Div, Moscow 117924, Russia

来源：

JOURNAL OF CRYSTAL GROWTH | 2000年 / 214卷

基金：

俄罗斯基础研究基金会;

关键词：

quantum dot; quantum well; temperature dependences; ZnTe; CdTe;

D O I：

10.1016/S0022-0248(00)00079-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

We present the results of studies of photoluminescence (PL) spectra in the temperature range 5-150 K for CdTe/ZnTe quantum dots (QDs) and ZnCdTe/ZnTe quantum wells (QWs) grown by MBE. The data for the QD systems have been obtained concerning the exciton-phonon interaction, the extent of lateral localization, the exciton binding energies and finally the influence of these factors on the PL line widths. We also have studied the influence of the exciton level energy depth on the temperature dependences of integral PL in QD and QW structures. (C) 2000 Elsevier Science B.V. All rights reserved.

引用

页码：250 / 254

页数：5

共 10 条

[1] EXCITONIC LUMINESCENCE OF CDTE AND CD0.87ZN0.13TE SUBMONOLAYERS IN ZNTE FILMS GROWN BY MOLECULAR-BEAM EPITAXY [J].

BAGAEV, VS ;

ZAYTSEV, VV ;

KALININ, VV ;

OKTYABRSKII, SR ;

PLOTNIKOV, AF .

SOLID STATE COMMUNICATIONS, 1993, 88 (10) :777-780

[2] Exciton binding energies and diamagnetic shifts in semiconductor quantum wires and quantum dots [J].

Bayer, M ;

Walck, SN ;

Reinecke, TL ;

Forchel, A .

PHYSICAL REVIEW B, 1998, 57 (11) :6584-6591

[3] ENGINEERING THE EXCITON LINEWIDTH IN II-VI QUANTUM-WELL STRUCTURES [J].

DORAN, JP ;

LOGUE, FP ;

MIYAJIMA, T ;

STANLEY, RP ;

DONEGAN, JF ;

HEGARTY, J .

OPTICAL ENGINEERING, 1994, 33 (12) :3921-3925

[4] ABSOLUTE ABSORPTION-COEFFICIENTS OF ZNTE SINGLE-CRYSTAL LAYERS - EXPERIMENT AND THEORY [J].

LANGEN, B ;

LEIDERER, H ;

LIMMER, W ;

GEBHARDT, W ;

RUFF, M ;

ROSSLER, U .

JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) :718-721

[5] INFLUENCE OF LONGITUDINAL AND LATERAL CONFINEMENTS ON EXCITONS IN CYLINDRICAL QUANTUM DOTS OF SEMICONDUCTORS [J].

LEGOFF, S ;

STEBE, B .

PHYSICAL REVIEW B, 1993, 47 (03) :1383-1391

[6]

LUBISHEV DI, 1996, APPL PHYS LETT, V68, P205

[7] QUASI-2-DIMENSIONAL EXCITONS IN (ZN,CD)SE/ZNSE QUANTUM-WELLS - REDUCED EXCITON LO-PHONON COUPLING DUE TO CONFINEMENT EFFECTS [J].

PELEKANOS, NT ;

DING, J ;

HAGEROTT, M ;

NURMIKKO, AV ;

LUO, H ;

SAMARTH, N ;

FURDYNA, JK .

PHYSICAL REVIEW B, 1992, 45 (11) :6037-6042

[8] DETERMINATION OF GAUSSIAN AND LORENTZIAN CONTENT OF EXPERIMENTAL LINE-SHAPES [J].

WERTHEIM, GK ;

BUTLER, MA ;

WEST, KW ;

BUCHANAN, DN .

REVIEW OF SCIENTIFIC INSTRUMENTS, 1974, 45 (11) :1369-1371

[9] Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates [J].

Xu, ZY ;

Lu, ZD ;

Yang, XP ;

Yuan, ZL ;

Zheng, BZ ;

Xu, JZ ;

Ge, WK ;

Wang, Y ;

Wang, J ;

Chang, LL .

PHYSICAL REVIEW B, 1996, 54 (16) :11528-11531

[10] Specific features in the temperature dependence of photoluminescence from CdTe/ZnTe size-quantized islands and ultrathin quantum wells [J].

Zaitsev, VV ;

Bagaev, VS ;

Onishchenko, EE .

PHYSICS OF THE SOLID STATE, 1999, 41 (04) :647-653

← 1 →