Low pressure chemical vapor deposition of fluorine-doped indium oxide films from an indium alkoxide complex

Fluorine-doped indium oxide films are of interest as a transparent conducting material. Polycrystalline indium oxide films were deposited at 400-550 degrees C in a low-pressure chemical vapor deposition process from In[OCMe(CF3)(2)](3)(H2N-t-Bu) and O-2 precursors. The films deposited at less than or equal to 500 degrees C contained 2-3 atom% fluorine while the film deposited at 550 degrees C had no detectable fluorine incorporation (by X-ray photoelectron spectroscopy with sputtering). Films deposited on quartz (approximate to 1800 Angstrom thickness) showed > 85% transmittance in the 400-800 nm region and had band gaps of 3.65-3.75 eV. Resistivities of 1.25 x 10(-2)-9.96 x 10(-3) Ohm cm were measured for the as-deposited films. The resistivities of films grown on silicon decreased markedly after annealing to values as low as 1.43 x 10(-3) Ohm cm.