Fluorine implantation of atomic layer epitaxy grown In2O3 films

被引：5

作者：

Asikainen, T ^{[1
]}

Ritala, M ^{[1
]}

Li, WM ^{[1
]}

Lappalainen, R ^{[1
]}

Leskela, M ^{[1
]}

机构：

[1] UNIV HELSINKI,ACCELERATOR LAB,FIN-00014 HELSINKI,FINLAND

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 06期

关键词：

D O I：

10.1149/1.1837703

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In2O3 films grown by atomic layer epitaxy were implanted by fluorine ions with doses ranging from 5 x 10(14) to 1.4 x 10(17) ions cm(-2). Annealing at 500 degrees C decreased the fluorine contents by similar to 40%, as analyzed by the nuclear resonance broadening method. The lowest resistivitity, 2.7 x 10(-4) Omega cm, was measured from film having an average fluorine content of 2.3 atom percent. Hall mobilities of the In2O3:F films were in the same range as those of the undoped In2O3, i.e., 60 to 80 cm(2)/Vs.

引用

页码：L140 / L141

页数：2

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