EFFECTS OF POSTANNEALING ON OXYGEN-CONTENT OF INDIUM TIN OXIDE-FILMS FABRICATED BY REACTIVE SPUTTERING

被引：7

作者：

HONDA, S

TSUJIMOTO, A

WATAMORI, M

OURA, K

机构：

[1] Department of Electronic Engineering, Osaka University, Suita, Osaka, 565

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1995年 / 34卷 / 10B期

关键词：

ITO; POSTANNEALING; DEPTH PROFILE OF OXYGEN CONTENT; ELECTRICAL PROPERTIES; OXYGEN DEFICIENCY;

D O I：

10.1143/JJAP.34.L1386

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Effects of post-annealing on the depth profile of oxygen content of indium tin oxide (ITO) films on glass substrates have been investigated. Absolute oxygen content of the films Nas estimated by a high-energy ion beam technique. The electrical properties and the oxygen contents, measured before and after post-annealing in vacuum, have been compared for films deposited under different conditions. Our present results implied that oxygen deficiency at the film surface, induced by post-annealing, might be responsible for the observed improvement of the electrical properties.

引用

页码：L1386 / L1389

页数：4

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