FLUORINE-DOPED INDIUM OXIDE THIN-FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION

被引：24

作者：

MARUYAMA, T

NAKAI, T

机构：

[1] Department of Chemical Engineering, Faculty of Engineering, Kyoto University

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 06期

关键词：

D O I：

10.1063/1.351023

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Transparent conductive fluorine-doped indium oxide thin films were prepared by an atmospheric-pressure chemical vapor deposition method. The raw material was [C7H15COO]2 In[H(CF2)4COO]. The polycrystalline films were obtained at a reaction temperature in the range of 350-450-degrees-C. This chemical vapor deposition method incorporates fluorine atoms into a crystalline structure and consequently leads to a high carrier concentration, yielding fluorine-doped indium oxide films of low resistivity. For the 320-nm-thick film deposited at 380-degrees-C, the resistivity was 4.4 X 10(-4) OMEGA cm, and the sheet resistance was 13.8-OMEGA/open-square.

引用

页码：2915 / 2917

页数：3

共 8 条

[1] FLUORINE DOPING OF IN2O3 FILMS EMPLOYING ION-PLATING TECHNIQUES [J].