Radiation hardness and lifetime studies of the VCSELs for the ATLAS Semiconductor Tracker

被引：13

作者：

Teng, PK

Weidberg, T

Chu, ML

Duh, TS

Gregor, IM

Hou, LS

Lee, SC

Song, PS

Su, DS

机构：

[1] Acad Sinica, Inst Phys, Taipei, Taiwan

[2] Univ Oxford, Dept Phys, Oxford, England

[3] Wuppertal Univ, Wuppertal, Germany

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT | 2003年 / 497卷 / 2-3期

关键词：

LHC; data transmission; optoelectronics; VCSELs; radiation tolerance;

D O I：

10.1016/S0168-9002(02)01922-8

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Studies have been performed on the radiation hardness of the type of VCSELs(2) that will be used in the ATLAS SemicConductor Tracker. The measurements were made using 30 MeV proton beams, 24 GeV/c proton beams and a gamma source. The lifetime of the devices after irradiation was studied. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：294 / 304

页数：11

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