GaN-nanowire-based dye-sensitized solar cells

被引：25

作者：

Chen, X. Y. ^{[1
]}

Yip, C. T. ^{[1
]}

Fung, M. K. ^{[1
]}

Djurisic, A. B. ^{[1
]}

Chan, W. K. ^{[2
]}

机构：

[1] Univ Hong Kong, Dept Phys, Hong Kong, Hong Kong, Peoples R China

[2] Univ Hong Kong, Dept Chem, Hong Kong, Hong Kong, Peoples R China

来源：

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING | 2010年 / 100卷 / 01期

关键词：

RECOMBINATION; PHOTOVOLTAICS; TRANSPORT; FILMS;

D O I：

10.1007/s00339-010-5580-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

GaN nanowires typically exhibit high electron mobility and excellent chemical stability. However, stability of GaN is detrimental for successful attachment of dye molecules and its application in dye-sensitized solar cells (DSSCs). Here we demonstrate DSSCs based on GaN/gallium oxide and GaN/TiO (x) core-shell structures, and we show that coating of GaN nanowires with a TiO (x) shell significantly increases dye adsorption and consequently photovoltaic performance. The best cells exhibited short circuit current density of 1.83 mA/cm(2) and power conversion efficiency of 0.44% under AM 1.5 simulated solar illumination.

引用

页码：15 / 19

页数：5

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