Charge density distribution of transparent p-type semiconductor (LaO)CuS

被引：18

作者：

Takase, Kouichi

Sato, Ken

Shoji, Osamu

Takahashi, Yumiko

Takano, Yoshiki

Sekizawa, Kazuko

Kuroiwa, Yoshihiro

Goto, Manabu

机构：

[1] Nihon Univ, Dept Phys, Chiyoda Ku, Tokyo 1018308, Japan

[2] Hiroshima Univ, Dept Phys Sci, Higashihiroshima, Hiroshima 7398526, Japan

[3] Okayama Univ, Dept Phys, Okayama 7008530, Japan

来源：

APPLIED PHYSICS LETTERS | 2007年 / 90卷 / 16期

关键词：

Charge density - Charge distribution - Chemical bonds - Electron diffraction - Lanthanum compounds - Synchrotron radiation - X ray powder diffraction;

D O I：

10.1063/1.2724891

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The charge density distributions of layered oxysulfide (LaO)CuS, known as a p-type transparent semiconductor, have been investigated by analyzing the synchrotron radiation powder diffraction profile with the maximum entropy method/Rietveld method. The bonding character of the Cu-S bond is revealed to be covalent. Meanwhile, the O-La bonding has both ionic and covalent characters. The number of electrons estimated by integrating the charge density around each atom gave direct evidence that each CuS and LaO layer is electrically almost neutral. (c) 2007 American Institute of Physics.

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页数：3

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