Preparation of CuInSe2 thin films with large grain by excimer laser ablation

被引：17

作者：

Yoshida, A

Tanahashi, N

Tanaka, T

Demizu, Y

Yamamoto, Y

Yamaguchi, T

机构：

[1] Toyohashi Univ Technol, Dept Elect & Elect Engn, Toyohashi, Aichi 441, Japan

[2] Fukui Coll Technol, Dept Elect Engn, Sabae 916, Japan

[3] Wakayama Coll Technol, Dept Elect Engn, Gobo 644077, Japan

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 1998年 / 50卷 / 1-4期

关键词：

CuInSe2; thin films; excimer laser ablation;

D O I：

10.1016/S0927-0248(97)00093-7

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Thin films of CuInSe2 (CIS) were prepared by XeCl excimer laser ablation on glass substrates. The deposition was carried out at 550 degrees C and the target-substrate distance was changed from 15 to 60 mm. From XRD and EPMA measurements, all films showed the single-phase and stoichiometric chalcopyrite structure, independent of the distance. The deposition rate was large with the small distance. The surface morphology and cross-sectional SEM images were observed. The electrical conductivity measurements gave p-type conduction, and the mobility was improved with the smaller distance.

引用

页码：7 / 12

页数：6

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