Correlated piecewise diffusion of a Ge ad-dimer on the Si(001) surface

被引：28

作者：

Lu, ZY ^{[1
]}

Wang, CZ

Ho, KM

机构：

[1] US DOE, Ames Lab, Ames, IA 50011 USA

[2] Iowa State Univ Sci & Technol, Dept Phys & Astron, Ames, IA 50011 USA

来源：

PHYSICAL REVIEW B | 2000年 / 62卷 / 12期

关键词：

D O I：

10.1103/PhysRevB.62.8104

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have performed extensive first-principles calculations to study the binding and diffusion of a Ge ad-dimer on the Si(001) surface. The diffusion of a Ge ad-dimer along the lowest-energy-barrier pathway is found to be piecewise but with strong correlation, and its energy barrier is 0.77 eV. Such a correlated piecewise diffusion pathway is also found to be favored by a Si ad-dimer on Si(001), with an energy barrier of 1.02 eV in excellent agreement with experimental measurements.

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页码：8104 / 8107

页数：4

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