Scanning tunneling microscopy study on void formation by thermal decomposition of thin oxide layers on stepped Si surfaces

被引：24

作者：

Fujita, K ^{[1
]}

Watanabe, H ^{[1
]}

Ichikawa, M ^{[1
]}

机构：

[1] Angstrom Technol Partnership, Joint Res Ctr Atom Technol, Tsukuba, Ibaraki 305, Japan

来源：

JOURNAL OF APPLIED PHYSICS | 1998年 / 83卷 / 08期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1063/1.367162

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We investigate void formation by thermal decomposition of thin oxide layers on stepped Si(001) and Si(111) surfaces by using high-temperature scanning tunneling microscopy. We have found that the surface roughening during void formation on stepped Si surfaces is less than that on on-axis Si surfaces. The Si atoms necessary for oxide decomposition are supplied from step edges on the stepped surface rather than by hole nucleation. (C) 1998 American Institute of Physics.

引用

页码：4091 / 4095

页数：5

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