INSITU STM IMAGING OF HIGH-TEMPERATURE OXYGEN ETCHING OF SI(111) (7X7) SURFACES

被引:26
作者
FELTZ, A
MEMMERT, U
BEHM, RJ
机构
[1] Institut für Kristallographie und Mineralogie, Universität München, W-8000 Munich
关键词
D O I
10.1016/0009-2614(92)85464-L
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Gas phase etching of Si(111)(7 x 7) surfaces, by reaction with O2 at almost-equal-to 950 K, was directly followed by in situ STM imaging. The reaction mechanism was found to strongly depend on the density of structural defects in the respective (7 x 7) surface layer, which can act as nucleation centers for pit formation, and on the terrace size. Under present conditions we observed a step-flow mechanism for removal of the topmost, defect-free Si layer and formation of monolayer deep pits in the defective (7 X 7) layers in the further reaction process. The resulting surface is rough on an atomic scale, with typically three layers exposed.
引用
收藏
页码:271 / 276
页数:6
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