INSITU STM IMAGING OF HIGH-TEMPERATURE OXYGEN ETCHING OF SI(111) (7X7) SURFACES

被引：26

作者：

FELTZ, A

MEMMERT, U

BEHM, RJ

机构：

[1] Institut für Kristallographie und Mineralogie, Universität München, W-8000 Munich

来源：

CHEMICAL PHYSICS LETTERS | 1992年 / 192卷 / 2-3期

关键词：

D O I：

10.1016/0009-2614(92)85464-L

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

Gas phase etching of Si(111)(7 x 7) surfaces, by reaction with O2 at almost-equal-to 950 K, was directly followed by in situ STM imaging. The reaction mechanism was found to strongly depend on the density of structural defects in the respective (7 x 7) surface layer, which can act as nucleation centers for pit formation, and on the terrace size. Under present conditions we observed a step-flow mechanism for removal of the topmost, defect-free Si layer and formation of monolayer deep pits in the defective (7 X 7) layers in the further reaction process. The resulting surface is rough on an atomic scale, with typically three layers exposed.

引用

页码：271 / 276

页数：6

共 16 条

[1]

BEDROSSIAN P, IN PRESS PHYS REV B

[2] KINETICS OF THE ADSORPTION OF O-2 AND OF THE DESORPTION OF SIO ON SI(100) - A MOLECULAR-BEAM, XPS, AND ISS STUDY [J].