Analytical model of 6H-SiC MOSFET

被引：11

作者：

Kumar, A

Kaushik, N

Haldar, S

Gupta, M

Gupta, RS

机构：

[1] Univ Delhi, Dept Elect Sci, Semicond Devices Res Lab, New Delhi 110021, India

[2] Motilal Nehru Coll, Dept Phys, New Delhi 110021, India

来源：

MICROELECTRONIC ENGINEERING | 2003年 / 65卷 / 04期

关键词：

6H-SiC; MOSFET; ionization; I-V characteristics;

D O I：

10.1016/S0167-9317(03)00053-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An analytical model of 6H-SiC inversion channel MOSFET is developed incorporating the influence of incomplete dopant ionization. The charge sheet approach is used to evaluate the drain current, transconductance and drain conductance. Maximun transconductance of 46 p,S is obtained for V-ds=50 mV at a gate voltage of 2.3 V An explicit analytical expression is also developed which relate the transconductance with interface trap density. It is observed that interface state density has an effect of lowering the transconductance. Some of the results obtained are verified with the experimental data. The interface trap density effects on other device characteristics has also been discussed. (C) 2003 Elsevier Science B.V. All rights reserved.

引用

收藏

页码：416 / 427

页数：12

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